Superconductivity of thin films of lead, indium, and tin prepared in the presence of oxygen
Identifieur interne : 000815 ( Main/Exploration ); précédent : 000814; suivant : 000816Superconductivity of thin films of lead, indium, and tin prepared in the presence of oxygen
Auteurs : RBID : ISTEX:339_1981_Article_BF00901279.pdfEnglish descriptors
Abstract
We have studied the influence of oxygen on the superconducting properties of thin films of lead, indium and tin deposited on glass or sapphire substrates. In addition, the morphological microstructure was investigated by scanning electron microscopy. The film thickness was 1.0 μm, and the partial pressure of O2 during the film deposition was raised up to 1×10−4 Torr. In all three materials the development of a granular structure and a strong increase in the residual electric resistivity was observed due to the O2-treatment. Whereas in the Pb films no change of the critical temperature was found, the In films deposited on glass substrates showed a slight increase ofTc due to the oxygen. The strongest increase ofTc (up to 8%) was observed in the O2-treated Sn films. These results are discussed in terms of the McMillan theory. From our measurements of the critical current densityjc we conclude that edge pinning is dominant in the undoped films. All three materials showed a strong increase ofjc due to the O2-treatment which must be interpreted in terms of bulk pinning.
DOI: 10.1007/BF00901279
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In addition, the morphological microstructure was investigated by scanning electron microscopy. The film thickness was 1.0 μm, and the partial pressure of O2 during the film deposition was raised up to 1×10−4 Torr. In all three materials the development of a granular structure and a strong increase in the residual electric resistivity was observed due to the O2-treatment. Whereas in the Pb films no change of the critical temperature was found, the In films deposited on glass substrates showed a slight increase ofTc due to the oxygen. The strongest increase ofTc (up to 8%) was observed in the O2-treated Sn films. These results are discussed in terms of the McMillan theory. From our measurements of the critical current densityjc we conclude that edge pinning is dominant in the undoped films. All three materials showed a strong increase ofjc due to the O2-treatment which must be interpreted in terms of bulk pinning.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="b9898c42fbe8f14b7cb1e2bbf63c979803f3482d"><titleInfo lang="eng"><title>Superconductivity of thin films of lead, indium, and tin prepared in the presence of oxygen</title></titleInfo><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Eichele</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalisches Institut II, Universität, D-7400, Tübingen, Fed. Rep. Germany</affiliation></name><name type="personal"><namePart type="given">W.</namePart><namePart type="family">Kern</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalisches Institut II, Universität, D-7400, Tübingen, Fed. Rep. 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In all three materials the development of a granular structure and a strong increase in the residual electric resistivity was observed due to the O2-treatment. Whereas in the Pb films no change of the critical temperature was found, the In films deposited on glass substrates showed a slight increase ofTc due to the oxygen. The strongest increase ofTc (up to 8%) was observed in the O2-treated Sn films. These results are discussed in terms of the McMillan theory. From our measurements of the critical current densityjc we conclude that edge pinning is dominant in the undoped films. All three materials showed a strong increase ofjc due to the O2-treatment which must be interpreted in terms of bulk pinning.</abstract><subject lang="eng"><genre>PACS</genre><topic>74.70.Dg</topic><topic>74.60.-w</topic><topic>73.60.Ka</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. 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